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| SI4425BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 0.019 @ VGS = -4.5 V - 9.1 FEATURES ID (A) -1 1.4 rDS(on) (W) 0.012 @ VGS = -10 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs S SO-8 S S S G 1 2 3 4 Top View P-Channel MOSFET 8 7 6 5 D D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -2.1 2.5 1.6 -55 to 150 - 9.1 -50 -1.3 1.5 0.9 W _C -7.0 A Symbol VDS VGS 10 secs Steady State -30 "20 Unit V - 11.4 -8.8 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72000 S-21862--Rev. B, 21-Oct-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 70 15 Maximum 50 85 18 Unit _C/W C/W 1 SI4425BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -11.4 A VGS = -4.5 V, ID = -9.1 A VDS = -15 V, ID = -11.4 A IS = -2.5 A, VGS = 0 V -50 0.010 0.015 29 -0.8 -1.2 0.012 0.019 -1.0 -3.0 "100 -1 -5 V nA mA m A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.5 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -10 V, ID = -11.4 A 64 11 17 15 13 100 53 41 25 20 150 80 80 ns 100 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 25_C 0 -55 _C 3 4 5 10 3V 0 0 1 2 3 4 5 10 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72000 S-21862--Rev. B, 21-Oct-02 SI4425BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 5000 Vishay Siliconix Capacitance VGS = 4.5 V 0.015 VGS = 10 V 0.010 C - Capacitance (pF) 0.020 4000 Ciss 3000 2000 0.005 1000 Crss Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 30 40 50 60 70 80 1.2 4 1.0 2 0.8 0 0 10 20 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.04 ID = 12 A 0.03 I S - Source Current (A) TJ = 150_C 10 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72000 S-21862--Rev. B, 21-Oct-02 www.vishay.com 3 SI4425BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 30 25 ID = 250 mA 0.4 Power (W) 20 Single Pulse Power, Junction-to-Ambient 0.6 V GS(th) Variance (V) 0.2 15 0.0 10 -0.2 5 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72000 S-21862--Rev. B, 21-Oct-02 SI4425BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72000 S-21862--Rev. B, 21-Oct-02 www.vishay.com 5 |
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